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TN2124K1-G
MOSFET Transistor - DMOS - N Channel - 134 mA - 240 V - 15 ohm - 4.5 V - 2 V. ...
DESCRIPTION
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Search Keywords: TN2124K1G
SPECIFICATIONS
FREQUENTLY ASKED QUESTIONS
Is TN2124K1-G RoHS compliant?
Yes, TN2124K1-G is RoHS compliant.
What is the lead time for TN2124K1-G?
The standard lead time for TN2124K1-G is approximately 4 weeks. In-stock quantities ship from Master Electronics.
IN STOCK: 5,000
Can Ship immediately
Manufacturer Stock: 18,000 can ship 9/21/26
Minimum Order Quantity: 500
Factory Lead-Time 4 Weeks can ship 10/12/26
Price (USD)
Tools/3D Models
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