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OPS667
The OPS667 is a matched pair consisting of a gallium arsenide infrared emitting diode and an NPN silicon phototransistor in a T-1 package. ...
描述
The OPS667 is a sensor pair comprising a gallium arsenide infrared emitting diode and a corresponding NPN silicon phototransistor. This device features a minimum on-state collector current of 5.0 mA with a 20 mA forward current. Key electrical characteristics include a collector-emitter breakdown voltage of at least 30 V, a maximum collector-emitter dark current of 100 nA, and a collector-emitter saturation voltage of 0.4 V. Designed for reliability, it operates over a temperature range of -40°C to +100°C. The OPS667 is well-suited for applications such as non-contact reflective object sensing, assembly line automation, machine safety, and end-of-travel sensors.
搜索关键词: OPS667
规格
常见问题
OPS667 是否符合 RoHS 标准？
是的，OPS667 符合 RoHS 标准。
OPS667 的交货期是多少？
OPS667 的标准交货期约为 22 天。有库存的数量由 Master Electronics 发货。
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