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NTJD5121NT1G
A dual N-Channel power MOSFET with ESD protection, rated for 60 V and 295 mA in a SC-88 package. ...
描述
The NTJD5121NT1G is a dual N-Channel power MOSFET featuring integrated ESD protection in a compact SC-88 surface-mount package. This device is characterized by a drain-to-source voltage of 60 V and a continuous drain current of 295 mA at an ambient temperature of 25°C. It offers low on-resistance, with a maximum RDS(on) of 1.6 Ω at a 10 V gate-source voltage and 2.5 Ω at 4.5 V. Key features include a low gate threshold voltage, low input capacitance, and a gate-source ESD rating of 2000 V (HBM). These characteristics make the NTJD5121NT1G suitable for applications such as low-side load switches and DC-DC converters.
搜索关键词: NTJD5121NT1G
规格
常见问题
NTJD5121NT1G 是否符合 RoHS 标准？
是的，NTJD5121NT1G 符合 RoHS 标准。
NTJD5121NT1G 的交货期是多少？
NTJD5121NT1G 的标准交货期约为 42 周。有库存的数量由 Master Electronics 发货。
数据表
