注册
CN
English
中文 / 汉语
Deutsch
Español
Nederlands
NTJD1155LT1G
The NTJD1155LT1G is an integrated P-Channel and N-Channel MOSFET configured as a high-side load switch with a level-shift function in an SC-88 package. ...
描述
The NTJD1155LT1G integrates a P-Channel and N-Channel MOSFET into a single SC-88 package, designed to function as a high-side load switch. The P-Channel MOSFET is a low RDS(on) load switch, while the N-Channel MOSFET with internal ESD protection functions as a level-shifter. This device operates on supply lines from 1.8 V to 8.0 V and can be controlled by logic signals from 1.5 V to 8.0 V. It is capable of driving continuous load currents up to ±1.3 A. Due to its small footprint and low-voltage control, the NTJD1155LT1G is particularly suited for power management in portable electronic equipment.
搜索关键词: NTJD1155LT1G
规格
常见问题
NTJD1155LT1G 是否符合 RoHS 标准？
是的，NTJD1155LT1G 符合 RoHS 标准。
NTJD1155LT1G 的交货期是多少？
NTJD1155LT1G 的标准交货期约为 46 周。有库存的数量由 Master Electronics 发货。
数据表
