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NTGD4167CT1G by onsemi
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NTGD4167CT1G

A complementary Power MOSFET featuring both an N-Channel and a P-Channel device with a 30V drain-source voltage rating in a dual TSOP-6 package. ...

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符合 RoHS
包装
附件
请求编程报价
合规证书

描述

The NTGD4167CT1G is a complementary Power MOSFET that integrates both an N-Channel and a P-Channel transistor into a single, compact 3x3 mm TSOP-6 package. The N-Channel component features a maximum on-resistance (RDS(on)) of 90 mΩ at a 4.5V gate voltage, while the P-Channel offers an RDS(on) of 170 mΩ at -4.5V. This device utilizes leading-edge trench technology for low on-resistance and has reduced gate charge to improve switching response. With independently connected devices, it provides significant design flexibility for applications such as DC-DC conversion circuits and load/power switching with level shifting.

搜索关键词: NTGD4167CT1G

规格

产品属性
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找到的产品: 0
供应商:
onsemi
部件编号:
NTGD4167CT1G
计量单位:
每 Each
RoHS:
Yes
HTS:
8541290095
COO:
TW
ECCN:
EAR99
供应商标准包装: 此信息提供给偏好按制造商标准包装数量的倍数购买的客户。最小订购数量和要求的订购倍数会与我们的价格和库存信息一起显示。
3000

常见问题

NTGD4167CT1G 是否符合 RoHS 标准？

是的，NTGD4167CT1G 符合 RoHS 标准。

NTGD4167CT1G 的交货期是多少？

NTGD4167CT1G 的标准交货期约为 65 周。有库存的数量由 Master Electronics 发货。

有存货: 1,183

可立即发货

已订购: 6,000   可以发货 12/22/27 

最小订购数量: 250

工厂交货期 65 周

价格 (USD)

数量
单价
250
$0.2689
1,000
$0.2632
3,000
$0.1746
6,000
$0.1742
9,000
$0.1737
27,000
$0.1733
51,000
$0.1729
102,000 +
$0.1724
供应商标准包装
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