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NTGD4167CT1G
A complementary Power MOSFET featuring both an N-Channel and a P-Channel device with a 30V drain-source voltage rating in a dual TSOP-6 package. ...
描述
The NTGD4167CT1G is a complementary Power MOSFET that integrates both an N-Channel and a P-Channel transistor into a single, compact 3x3 mm TSOP-6 package. The N-Channel component features a maximum on-resistance (RDS(on)) of 90 mΩ at a 4.5V gate voltage, while the P-Channel offers an RDS(on) of 170 mΩ at -4.5V. This device utilizes leading-edge trench technology for low on-resistance and has reduced gate charge to improve switching response. With independently connected devices, it provides significant design flexibility for applications such as DC-DC conversion circuits and load/power switching with level shifting.
搜索关键词: NTGD4167CT1G
规格
FREQUENTLY ASKED QUESTIONS
Is NTGD4167CT1G RoHS compliant?
Yes, NTGD4167CT1G is RoHS compliant.
What is the lead time for NTGD4167CT1G?
The standard lead time for NTGD4167CT1G is approximately 18 days. In-stock quantities ship from Master Electronics.
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