NDT456P
onsemiThe NDT456P is a -30V, -7.5A P-Channel enhancement mode field effect transistor designed for power management and switching applications. ...
描述
The NDT456P is a P-Channel enhancement mode power field effect transistor produced using a high cell density DMOS technology for superior switching performance. It is rated for a drain-source voltage of -30V and a continuous drain current of -7.5A. This device features a very low on-state resistance, with an RDS(ON) of 0.030 Ω at VGS = -10V and 0.045 Ω at VGS = -4.5V. Housed in a surface-mount SOT-223 package, it offers high power and current handling capabilities. The NDT456P is particularly suited for low voltage applications such as notebook computer power management, battery-powered circuits, and DC motor control.
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规格
有存货: 1,000
可立即发货
Minimum Order Quantity: 50
工厂交货期 11 周
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