NDT452AP by onsemi
onsemi 授权经销商

NDT452AP

The NDT452AP is a P-Channel enhancement mode power field-effect transistor rated for -30V drain-source voltage and -5A continuous drain current. ...

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不符合 RoHS 规定
包装
附件
请求编程报价
合规证书

描述

The NDT452AP is a P-Channel enhancement mode power field-effect transistor produced using a high cell density DMOS technology to minimize on-state resistance and provide superior switching performance. It features a drain-source voltage (VDSS) of -30V, a continuous drain current (ID) of -5A, and a low on-state resistance (RDS(ON)) of 0.065 Ω at a gate-source voltage of -10V. The device can handle pulsed drain currents up to -15A and operates over a wide temperature range of -65°C to 150°C. Housed in a SOT-223 surface-mount package, this transistor is particularly suited for low-voltage applications such as notebook computer power management and DC motor control.

搜索关键词: NDT452AP

规格

产品属性
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找到的产品: 0
供应商:
onsemi
部件编号:
NDT452AP
计量单位:
每 Each
RoHS:
No
HTS:
8541210095
COO:
KR
ECCN:
EAR99
供应商标准包装: 供应商原始包装中所含物品的数量、长度、重量或体积,以便高效存储、搬运和配送。
4000

常见问题

NDT452AP 是否符合 RoHS 标准?

不,NDT452AP 不符合 RoHS 标准。

NDT452AP 的交货期是多少?

NDT452AP 的标准交货期约为 18 周。有库存的数量由 Master Electronics 发货。

有存货: 9,649

可立即发货

最小订购数量: 1000

工厂交货期 18 周

价格 (USD)

数量
单价
1,000
$0.4921
4,000
$0.3922
8,000
$0.3675
12,000
$0.3666
16,000
$0.3657
28,000
$0.3648
52,000 +
$0.3638

工具/3D模型

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