NDS331N by onsemi
onsemi 授权经销商

NDS331N

The NDS331N is an N-Channel logic level enhancement mode Field Effect Transistor (FET) featuring a 20V drain-source voltage and 1.3A continuous drain current. ...

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符合 RoHS
包装
附件
请求编程报价
合规证书

描述

The NDS331N is an N-Channel logic level enhancement mode power FET designed with high-density DMOS technology to minimize on-state resistance. It operates with a drain-source voltage of 20V, a continuous gate-source voltage of 8V, and handles a continuous drain current of 1.3A. Key features include a low on-state resistance (RDS(ON)) of 0.16 Ω at VGS=4.5V and 0.21 Ω at VGS=2.7V. Housed in a SOT-23 surface-mount package, this transistor is ideal for low-voltage applications such as notebook computers, portable phones, and other battery-powered circuits requiring fast switching and low power loss.

搜索关键词: NDS331N

规格

产品属性
属性值
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找到的产品: 0
供应商:
onsemi
部件编号:
NDS331N
计量单位:
每 Each
RoHS:
Yes
HTS:
8541210095
COO:
KR
ECCN:
EAR99
供应商标准包装: 供应商原始包装中所含物品的数量、长度、重量或体积,以便高效存储、搬运和配送。
3000

常见问题

NDS331N 是否符合 RoHS 标准?

是的,NDS331N 符合 RoHS 标准。

NDS331N 的交货期是多少?

NDS331N 的标准交货期约为 16 周。有库存的数量由 Master Electronics 发货。

有存货: 75,422

可立即发货

最小订购数量: 250

工厂交货期 16 周

价格 (USD)

数量
单价
250
$0.2619
1,000
$0.1839
3,000
$0.1567
6,000
$0.1415
9,000
$0.1390
27,000
$0.1385
51,000
$0.1382
102,000 +
$0.1378

工具/3D模型

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