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描述
The ONSEMI MMBT5089LT1G is a high-performance NPN bipolar junction transistor (BJT) renowned for its excellent gain characteristics and robust performance in a compact package. Ideal for a wide range of electronic applications, this transistor is designed to amplify or switch electronic signals with efficiency and reliability. It features a maximum collector current of 100mA and a collector-emitter voltage of 30V, making it suitable for a variety of low to medium current and voltage applications. The MMBT5089LT1G is housed in a space-saving SOT-23 package, which makes it perfect for modern electronic designs that require efficient use of board space. It is widely used in amplification circuits, switching applications, and in the creation of oscillators and multivibrators. With ONSEMI's commitment to quality and performance, this transistor ensures consistent results across different use cases.
搜索关键词: MMBT5089LT1G
规格
常见问题
MMBT5089LT1G 是否符合 RoHS 标准？
是的，MMBT5089LT1G 符合 RoHS 标准。
MMBT5089LT1G 的交货期是多少？
MMBT5089LT1G 的标准交货期约为 52 周。有库存的数量由 Master Electronics 发货。
有存货: 621,000
可立即发货
最小订购数量: 3000
此消息模板用于通知联盟会员某个订单已付款。当金额被扣款时，订单会获得已付款状态。: 3000
工厂交货期 52 周
数据表
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