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MMBT3906LT1G by onsemi
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MMBT3906LT1G

onsemi

The MMBT3906LT1G is a general-purpose PNP silicon transistor for switching and amplification applications. ...

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符合 RoHS 规定
包装
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描述

The MMBT3906LT1G is a general-purpose PNP silicon transistor housed in a SOT-23 package. This device features a collector-emitter voltage of -40 Vdc and a continuous collector current of -200 mAdc. Key performance characteristics include a DC current gain (hFE) between 100 and 300 at a collector current of -10 mA, and a minimum current-gain-bandwidth product of 250 MHz. The transistor has a total device dissipation of 225 mW and operates over a junction temperature range of -55°C to +150°C, making it suitable for a wide variety of general-purpose switching and linear amplification circuits.

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Products found: 0
供应商:
onsemi
部件编号:
MMBT3906LT1G
计量单位:
Per Each
RoHS:
Yes
HTS:
8541210095
COO:
MY
ECCN:
EAR99
供应商标准包装: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
3000
Maximum Collector Base Voltage:
40 V
Family:
MMBT3906L
Dimension:
2.9 x 1.3 x 0.94 mm

有存货: 267,000

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已订购: 510,000   可以发货 7/10/26 

Minimum Order Quantity: 3000

Multiple: 3000

工厂交货期 42 周

数量
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3,000
$0.0304
12,000
$0.0279
27,000
$0.0276
51,000
$0.0268
102,000
$0.0258
252,000
$0.0252
501,000 +
$0.0249
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