MJ21196G
onsemiThe MJ21196G is an NPN silicon power transistor designed for high-power audio output, disk head positioners, and linear applications. ...
描述
The MJ21196G is an NPN silicon power transistor that utilizes Perforated Emitter technology for high-power applications. It is rated for a collector-emitter voltage of 250 V and a continuous collector current of 16 A, with a total power dissipation capacity of 250 W. This device features a high DC current gain with a minimum hFE of 25 at an 8 A collector current, ensuring excellent gain linearity and low total harmonic distortion. Due to its high Safe Operating Area (SOA) and robust design, the MJ21196G is ideal for high-fidelity audio amplifiers, disk head positioners, and other demanding linear circuits.
Search Keywords: MJ21196G
规格
有存货: 1,001
可立即发货
已订购:
1,400
可以发货 9/7/26
Minimum Order Quantity: 5
工厂交货期 29 周
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