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H11G2SR2M
The H11G2SR2M is a high-voltage, photodarlington-type optically coupled optocoupler designed for electrical isolation and high sensitivity. ...
描述
The H11G2SR2M is a photodarlington-type optocoupler, which integrates a gallium arsenide infrared emitting diode with a silicon darlington phototransistor. It features a high collector-emitter breakdown voltage of at least 80V and offers high sensitivity with a minimum current transfer ratio (CTR) of 500% at a low input current of 1mA. This device maintains low leakage current, not exceeding 100µA at 60V and an elevated temperature of 80°C, and has a maximum saturation voltage of 1.0V. It is well-suited for applications such as CMOS logic interfacing, telephone ring detection, low input TTL interfacing, and power supply isolation.
搜索关键词: H11G2SR2M
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常见问题
H11G2SR2M 是否符合 RoHS 标准？
是的，H11G2SR2M 符合 RoHS 标准。
H11G2SR2M 的交货期是多少？
H11G2SR2M 的标准交货期约为 24 周。有库存的数量由 Master Electronics 发货。
有存货: 1,850
可立即发货
已订购:
7,000
可以发货 1/8/27
最小订购数量: 50
工厂交货期 24 周
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