FQB12P20TM
The FQB12P20TM is a -200V P-Channel enhancement mode MOSFET designed for high-efficiency switching applications. ...
描述
The FQB12P20TM is a P-Channel enhancement mode power MOSFET produced using a proprietary planar stripe, DMOS technology. It is characterized by a drain-source voltage of -200V, a continuous drain current of -11.5A, and a low on-state resistance of 0.47Ω at a -10V gate-source voltage. This device offers superior switching performance with a low typical gate charge of 31 nC and a low reverse transfer capacitance of 30 pF. It is 100% avalanche tested and features improved dv/dt capability for robust operation. These characteristics make the FQB12P20TM well-suited for high-efficiency switching DC/DC converters.
搜索关键词: FQB12P20TM
规格
常见问题
FQB12P20TM 是否符合 RoHS 标准?
不,FQB12P20TM 不符合 RoHS 标准。
FQB12P20TM 的交货期是多少?
FQB12P20TM 的标准交货期约为 11 天。有库存的数量由 Master Electronics 发货。
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