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FGH60N60SMD
The FGH60N60SMD is a 600V, 60A Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-current switching applications. ...
描述
The FGH60N60SMD is a second-generation Field Stop IGBT that offers optimum performance by utilizing novel field stop technology. It is rated for a collector-emitter voltage of 600V and a continuous collector current of 60A at 100°C. Key features include a high maximum junction temperature of 175°C, a low typical saturation voltage of 1.9V at 60A, and fast switching characteristics which minimize losses. Its positive temperature coefficient allows for easy parallel operation, making it a robust choice for high-power designs. This IGBT is ideal for applications requiring low conduction and switching losses, such as solar inverters, uninterruptible power supplies (UPS), welders, and energy storage systems (ESS).
搜索关键词: FGH60N60SMD
规格
FREQUENTLY ASKED QUESTIONS
Is FGH60N60SMD RoHS compliant?
No, FGH60N60SMD is not RoHS compliant.
What is the lead time for FGH60N60SMD?
The standard lead time for FGH60N60SMD is approximately 13 days. In-stock quantities ship from Master Electronics.
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