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FDMS86200 by onsemi
onsemi 授权经销商

FDMS86200

The FDMS86200 is a 150V N-Channel PowerTrench® MOSFET featuring Shielded Gate technology for high-efficiency applications. ...

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不符合 RoHS 规定
包装
附件
请求编程报价
合规证书

描述

The FDMS86200 is an N-Channel MOSFET produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This device is optimized for low on-state resistance and superior switching performance, featuring a maximum rDS(on) of 18 mΩ at a gate-source voltage of 10V. It has a maximum drain-to-source voltage rating of 150V and can handle a continuous drain current of up to 35A at a case temperature of 25°C. The combination of an advanced package and silicon results in high efficiency, making it well-suited for DC-DC conversion applications.

搜索关键词: FDMS86200

规格

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找到的产品: 0
供应商:
onsemi
部件编号:
FDMS86200
计量单位:
每 Each
RoHS:
No
HTS:
8541290095
COO:
KR
ECCN:
EAR99
供应商标准包装: 此信息提供给偏好按制造商标准包装数量的倍数购买的客户。最小订购数量和要求的订购倍数会与我们的价格和库存信息一起显示。
3000

FREQUENTLY ASKED QUESTIONS

Is FDMS86200 RoHS compliant?

No, FDMS86200 is not RoHS compliant.

What is the lead time for FDMS86200?

The standard lead time for FDMS86200 is approximately 77 days. In-stock quantities ship from Master Electronics.

有存货: 3,340

发货 today, 输入设置值。

已订购: 6,000   可以发货 1/5/28 

最小订购数量: 25

工厂交货期 77 周

价格 (USD)

数量
单价
25
$2.12
100
$1.11
250
$1.10
500
$1.02
1,000
$1.01
3,000
$1.00
6,000
$0.99
9,000 +
$0.98
供应商标准包装
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