TN2124K1-G
MOSFET Transistor - DMOS - N Channel - 134 mA - 240 V - 15 ohm - 4.5 V - 2 V. ...
描述
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
搜索关键词: TN2124K1G
规格
常见问题
TN2124K1-G 是否符合 RoHS 标准?
是的,TN2124K1-G 符合 RoHS 标准。
TN2124K1-G 的交货期是多少?
TN2124K1-G 的标准交货期约为 4 周。有库存的数量由 Master Electronics 发货。
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