JANTX2N3019S
Microchip TechnologyBipolar (BJT) Transistor - NPN - 1A Ic - 80V Collector Emitter Breakdown (Max) - 800 mW - TO-39 Package - Through Hole.
描述
The JANTX2N3019S NPN leaded silicon transistor device is military qualified for high-reliability applications. Operating temperature range is from -65°C to 200°C (TJ).
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规格
有存货: 326
可立即发货
Minimum Order Quantity: 5
工厂交货期 22 周
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