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APT45GP120JDQ2 by microchip technology

APT45GP120JDQ2

Microchip Technology

The APT45GP120JDQ2 is a 1200V Punch-Through technology IGBT designed for high-frequency, high-voltage switching applications. ...

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符合 RoHS 规定
TUBE 包装
附件
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描述

The APT45GP120JDQ2 is a POWER MOS 7® IGBT that utilizes Punch-Through technology for high-voltage power switching. It is rated for a collector-emitter voltage of 1200V and can handle a continuous collector current of 75A at a case temperature of 25°C, or 34A at 110°C. The device features a total power dissipation of 329W and a robust Reverse Bias Safe Operating Area (RBSOA) of 170A at 960V. With an operating junction temperature range of -55°C to 150°C and features like low conduction loss and ultrafast tail current shutoff, it ensures reliable performance. This IGBT is optimized for use in high-frequency switch-mode power supplies and other demanding switching applications.

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规格

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Products found: 0
供应商:
Microchip Technology
部件编号:
APT45GP120JDQ2
计量单位:
Per Each
RoHS:
Yes
HTS:
8541290095
COO:
PH
ECCN:
EAR99
供应商标准包装: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
1
Package Type:
TUBE
Family:
APT45GP120JDQ2
Dimension:
38.26996mm(Max) x 25.4(Max) x 9.6(Max)mm

有存货: 21

可立即发货

缺货数量的起订量: 5

工厂交货期 20 周

PRICE (USD)

数量
Unit Price
1
$56.26
5
$56.12
10
$42.09
15
$39.28
20 +
$38.50
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