APT45GP120JDQ2
The APT45GP120JDQ2 is a 1200V Punch-Through technology IGBT designed for high-frequency, high-voltage switching applications. ...
描述
The APT45GP120JDQ2 is a POWER MOS 7® IGBT that utilizes Punch-Through technology for high-voltage power switching. It is rated for a collector-emitter voltage of 1200V and can handle a continuous collector current of 75A at a case temperature of 25°C, or 34A at 110°C. The device features a total power dissipation of 329W and a robust Reverse Bias Safe Operating Area (RBSOA) of 170A at 960V. With an operating junction temperature range of -55°C to 150°C and features like low conduction loss and ultrafast tail current shutoff, it ensures reliable performance. This IGBT is optimized for use in high-frequency switch-mode power supplies and other demanding switching applications.
搜索关键词: APT45GP120JDQ2
规格
常见问题
APT45GP120JDQ2 是否符合 RoHS 标准?
是的,APT45GP120JDQ2 符合 RoHS 标准。
APT45GP120JDQ2 的交货期是多少?
APT45GP120JDQ2 的标准交货期约为 20 天。有库存的数量由 Master Electronics 发货。
有存货: 21
可立即发货
制造商库存: 28 可以发货 9/21/26
缺货数量的起订量: 5
工厂交货期 20 周 可以发货 1/25/27
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