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BIDW30N60T by bourns
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BIDW30N60T

Bourns

IGBT Discrete 600V - 30A - TO-247 - -55°C to +150°C ...

产品说明书
符合 RoHS 规定
TUBE 包装
附件
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描述

BIDW30N60T is an N-channel Insulated Gate Bipolar Transistor (IGBT) that combines MOS gate and bipolar transistor technology for high voltage and high current applications. It features advanced trench-gate field-stop technology providing low collector-emitter saturation voltage (VCE(sat) typ. 1.65 V at 30 A) and reduced switching losses. The device offers a collector-emitter voltage rating of 600 V, continuous collector current of 30 A at 100°C, and total power dissipation of 230 W. With fast switching characteristics including turn-on delay time of 30 ns and turn-off delay time of 67 ns, it is well-suited for switch-mode power supplies (SMPS), uninterruptible power sources (UPS), power factor correction (PFC), and induction heating applications.

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规格

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Products found: 0
供应商:
Bourns
部件编号:
BIDW30N60T
计量单位:
Per Each
RoHS:
Yes
HTS:
8541290095
COO:
CN
ECCN:
EAR99
供应商标准包装: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
600
Package Type:
TUBE

有存货: 3,000

可立即发货

库存数量的起订量: 56

缺货数量的起订量: 56

工厂交货期 16 周

PRICE (USD)

数量
Unit Price
56
$5.31
250
$5.30
500
$5.28
750
$5.27
1,500
$2.79
2,250
$1.96
3,000 +
$1.92
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