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NTJD5121NT1G by onsemi
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NTJD5121NT1G

onsemi

A dual N-Channel power MOSFET with ESD protection, rated for 60 V and 295 mA in a SC-88 package. ...

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符合 RoHS 规定
包装
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描述

The NTJD5121NT1G is a dual N-Channel power MOSFET featuring integrated ESD protection in a compact SC-88 surface-mount package. This device is characterized by a drain-to-source voltage of 60 V and a continuous drain current of 295 mA at an ambient temperature of 25°C. It offers low on-resistance, with a maximum RDS(on) of 1.6 Ω at a 10 V gate-source voltage and 2.5 Ω at 4.5 V. Key features include a low gate threshold voltage, low input capacitance, and a gate-source ESD rating of 2000 V (HBM). These characteristics make the NTJD5121NT1G suitable for applications such as low-side load switches and DC-DC converters.

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规格

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Products found: 0
供应商:
onsemi
部件编号:
NTJD5121NT1G
计量单位:
Per Each
RoHS:
Yes
HTS:
8541290095
COO:
TW
ECCN:
EAR99
供应商标准包装: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
3000

有存货: 162,000

可立即发货

Minimum Order Quantity: 3000

Multiple: 3000

工厂交货期 42 周

数量
Unit Price
3,000
$0.0575
6,000
$0.0512
12,000
$0.0507
27,000
$0.0506
51,000
$0.0504
102,000
$0.0503
150,000
$0.0502
252,000 +
$0.0501
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