MJD44H11T4G
The MJD44H11T4G is an NPN silicon power transistor rated for 80V and 8A, designed for general purpose power and switching applications. ...
描述
The MJD44H11T4G is an NPN power transistor designed for general-purpose power and switching applications such as output or driver stages. It supports a collector-emitter voltage of 80V and a continuous collector current of 8A. This device features a low collector-emitter saturation voltage of 1.0V maximum at 8A and a minimum DC current gain (hFE) of 40 at a collector current of 4A. With a typical gain-bandwidth product of 50 MHz and fast switching speeds, it is optimized for efficient performance. Housed in a surface-mount DPAK package, the MJD44H11T4G is ideal for use in switching regulators, converters, and power amplifiers.
搜索关键词: MJD44H11T4G
规格
常见问题
MJD44H11T4G 是否符合 RoHS 标准?
不,MJD44H11T4G 不符合 RoHS 标准。
MJD44H11T4G 的交货期是多少?
MJD44H11T4G 的标准交货期约为 43 周。有库存的数量由 Master Electronics 发货。
有存货: 33,800
发货 today, 输入设置值。
已订购:
30,000
可以发货 8/11/27
最小订购数量: 100
工厂交货期 43 周
价格 (USD)
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