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H11G2M
The H11G2M is a photodarlington-type optically coupled optocoupler in a 6-pin DIP package, designed for high voltage isolation. ...
描述
The H11G2M is a photodarlington-type optocoupler that integrates a gallium arsenide infrared emitting diode with a silicon darlington phototransistor. This device features a high collector-emitter breakdown voltage of at least 80 V and exhibits high sensitivity with a minimum current transfer ratio (CTR) of 500% at a low input current of 1 mA. It provides high electrical isolation rated at 4,170 VACRMS for one minute and maintains low leakage current at elevated temperatures. The H11G2M is ideal for applications requiring power supply isolation, telephone ring detection, and interfacing with CMOS or low-input TTL logic.
搜索关键词: H11G2M
规格
FREQUENTLY ASKED QUESTIONS
Is H11G2M RoHS compliant?
Yes, H11G2M is RoHS compliant.
What is the lead time for H11G2M?
The standard lead time for H11G2M is approximately 16 days. In-stock quantities ship from Master Electronics.
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