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FQB12P20TM by onsemi

FQB12P20TM

onsemi

The FQB12P20TM is a -200V P-Channel enhancement mode MOSFET designed for high-efficiency switching applications. ...

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不符合 RoHS 规定
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描述

The FQB12P20TM is a P-Channel enhancement mode power MOSFET produced using a proprietary planar stripe, DMOS technology. It is characterized by a drain-source voltage of -200V, a continuous drain current of -11.5A, and a low on-state resistance of 0.47Ω at a -10V gate-source voltage. This device offers superior switching performance with a low typical gate charge of 31 nC and a low reverse transfer capacitance of 30 pF. It is 100% avalanche tested and features improved dv/dt capability for robust operation. These characteristics make the FQB12P20TM well-suited for high-efficiency switching DC/DC converters.

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规格

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Products found: 0
供应商:
onsemi
部件编号:
FQB12P20TM
计量单位:
Per Each
RoHS:
No
HTS:
8541290095
COO:
CN
ECCN:
EAR99
供应商标准包装: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
800

有存货: 2,950

可立即发货

Minimum Order Quantity: 25

工厂交货期 11 周

PRICE (USD)

数量
Unit Price
25
$1.745
250
$1.300
800
$0.917
1,600
$0.851
3,200
$0.848
5,600
$0.846
8,000
$0.844
10,400 +
$0.842
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