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APT50GN60BDQ3G by microchip technology
Microchip Technology 授权经销商

APT50GN60BDQ3G

The APT50GN60BDQ3G is a 600V Field Stop Trench Gate IGBT designed for low-frequency applications requiring minimal conduction loss. ...

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符合 RoHS
TUBE 包装
附件
请求编程报价
合规证书

描述

The APT50GN60BDQ3G is a 600V Insulated Gate Bipolar Transistor (IGBT) that utilizes advanced Field Stop and Trench Gate technologies for ultra-low VCE(ON). It features a continuous collector current of 107A at 25°C, a total power dissipation of 366W, and is rated for a maximum junction temperature of 175°C. The device offers a 6µs short circuit capability, while low gate charge and tight parameter distribution simplify gate drive design and enable easy paralleling. Its characteristics make it ideal for low-frequency power applications such as welding, inductive heating, solar inverters, motor drives, and uninterruptible power supplies (UPS).

搜索关键词: APT50GN60BDQ3G

规格

产品属性
属性值
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找到的产品: 0
供应商:
Microchip Technology
部件编号:
APT50GN60BDQ3G
计量单位:
每 Each
RoHS:
Yes
HTS:
8541290095
ECCN:
EAR99
供应商标准包装: 此信息提供给偏好按制造商标准包装数量的倍数购买的客户。最小订购数量和要求的订购倍数会与我们的价格和库存信息一起显示。
1
封装类型:
TUBE
最大功耗:
366000 mW
最大连续集电极电流:
107 A
尺寸:
16.266976mm(Max) x 5.31(Max) x 21.46(Max)mm
最大栅极-发射极电压:
±30 V
系列:
APT50GN60BDQ3
通道类型:
N6974
配置:
Single6975
最大集电极-发射极电压:
600 V
最大栅极发射极漏电流:
0.6 uA

常见问题

APT50GN60BDQ3G 是否符合 RoHS 标准？

是的，APT50GN60BDQ3G 符合 RoHS 标准。

APT50GN60BDQ3G 的交货期是多少？

APT50GN60BDQ3G 的标准交货期约为 26 天。有库存的数量由 Master Electronics 发货。

有存货: 0

最小订购数量: 5

工厂交货期 26 周

价格 (USD)

数量
单价
5
$10.27
25
$9.30
50
$9.05
100
$8.82
250
$8.49
500
$8.47
1,000 +
$8.39
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