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描述
BIDW30N60T is an N-channel Insulated Gate Bipolar Transistor (IGBT) that combines MOS gate and bipolar transistor technology for high voltage and high current applications. It features advanced trench-gate field-stop technology providing low collector-emitter saturation voltage (VCE(sat) typ. 1.65 V at 30 A) and reduced switching losses. The device offers a collector-emitter voltage rating of 600 V, continuous collector current of 30 A at 100°C, and total power dissipation of 230 W. With fast switching characteristics including turn-on delay time of 30 ns and turn-off delay time of 67 ns, it is well-suited for switch-mode power supplies (SMPS), uninterruptible power sources (UPS), power factor correction (PFC), and induction heating applications.
搜索关键词: BIDW30N60T
规格
常见问题
BIDW30N60T 是否符合 RoHS 标准？
是的，BIDW30N60T 符合 RoHS 标准。
BIDW30N60T 的交货期是多少？
BIDW30N60T 的标准交货期约为 16 天。有库存的数量由 Master Electronics 发货。
有存货: 2,199
可立即发货
最小订购数量: 56
工厂交货期 16 周
数据表
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