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BIDW20N60T by bourns
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BIDW20N60T

Bourns

IGBT Discrete 600V - 20A - TO-247 - -55°C to +150°C ...

产品说明书
符合 RoHS 规定
TUBE 包装
附件
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描述

BIDW20N60T is an N-channel Insulated Gate Bipolar Transistor (IGBT) that combines MOS gate and bipolar transistor technology for high voltage and high current applications. It features advanced trench-gate field-stop technology providing a collector-emitter voltage of 600 V, continuous collector current of 20 A, and low collector-emitter saturation voltage (VCE(sat)) of 1.7 V typical at 25°C. The device offers total power dissipation of 192 W, low switching losses with turn-on energy of 1 mJ and turn-off energy of 0.3 mJ, and operates over a junction temperature range of -55°C to +150°C. Common applications include switch-mode power supplies (SMPS), uninterruptible power sources (UPS), power factor correction (PFC), and stepper motor drives where optimized conduction and low switching losses are essential.

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规格

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Products found: 0
供应商:
Bourns
部件编号:
BIDW20N60T
计量单位:
Per Each
RoHS:
Yes
HTS:
8541290095
COO:
CN
ECCN:
EAR99
供应商标准包装: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
600
Package Type:
TUBE

有存货: 4,195

可立即发货

库存数量的起订量: 69

缺货数量的起订量: 69

工厂交货期 16 周

数量
Unit Price
69
$4.37
250
$4.36
500
$4.35
750
$4.34
1,500
$2.30
2,250
$1.61
3,000 +
$1.58
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