MMBT3906LT1G
The MMBT3906LT1G is a general-purpose PNP silicon transistor for switching and amplification applications. ...
DESCRIPTION
The MMBT3906LT1G is a general-purpose PNP silicon transistor housed in a SOT-23 package. This device features a collector-emitter voltage of -40 Vdc and a continuous collector current of -200 mAdc. Key performance characteristics include a DC current gain (hFE) between 100 and 300 at a collector current of -10 mA, and a minimum current-gain-bandwidth product of 250 MHz. The transistor has a total device dissipation of 225 mW and operates over a junction temperature range of -55°C to +150°C, making it suitable for a wide variety of general-purpose switching and linear amplification circuits.
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SPECIFICATIONS
FREQUENTLY ASKED QUESTIONS
Is MMBT3906LT1G RoHS compliant?
Yes, MMBT3906LT1G is RoHS compliant.
What is the lead time for MMBT3906LT1G?
The standard lead time for MMBT3906LT1G is approximately 42 days. In-stock quantities ship from Master Electronics.
IN STOCK: 669,000
Can Ship immediately
Minimum Order Quantity: 3000
Multiple: 3000
Factory Lead-Time 42 Weeks
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