APT50GN60BDQ3G
The APT50GN60BDQ3G is a 600V Field Stop Trench Gate IGBT designed for low-frequency applications requiring minimal conduction loss. ...
DESCRIPTION
The APT50GN60BDQ3G is a 600V Insulated Gate Bipolar Transistor (IGBT) that utilizes advanced Field Stop and Trench Gate technologies for ultra-low VCE(ON). It features a continuous collector current of 107A at 25°C, a total power dissipation of 366W, and is rated for a maximum junction temperature of 175°C. The device offers a 6µs short circuit capability, while low gate charge and tight parameter distribution simplify gate drive design and enable easy paralleling. Its characteristics make it ideal for low-frequency power applications such as welding, inductive heating, solar inverters, motor drives, and uninterruptible power supplies (UPS).
Search Keywords: APT50GN60BDQ3G
SPECIFICATIONS
FREQUENTLY ASKED QUESTIONS
Is APT50GN60BDQ3G RoHS compliant?
Yes, APT50GN60BDQ3G is RoHS compliant.
What is the lead time for APT50GN60BDQ3G?
The standard lead time for APT50GN60BDQ3G is approximately 26 days. In-stock quantities ship from Master Electronics.
IN STOCK: 0
Minimum Order Quantity: 5
Factory Lead-Time 26 Weeks
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