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BIDNW30N60H3
IGBT Discrete 600V - 30A - TO-247N - -55°C to +150°C ...
DESCRIPTION
BIDNW30N60H3 is a 600 V, 30 A Insulated Gate Bipolar Transistor (IGBT) that combines MOS gate and bipolar transistor technology for optimized high-voltage and high-current switching performance. The device employs advanced trench-gate field-stop technology, which provides superior control of dynamic characteristics, resulting in a low collector-emitter saturation voltage (VCE(sat)) of 1.65 V typical at 30 A and 25°C, and reduced switching losses with fast switching response. Key electrical characteristics include a gate-threshold voltage of 4.0–6.5 V, turn-on delay time of 30 ns, and total switching energy of 2.3 mJ, making it well-suited for demanding applications such as switch-mode power supplies (SMPS), uninterruptible power sources (UPS), power factor correction (PFC), and induction heating systems.
Search Keywords: BIDNW30N60H3
SPECIFICATIONS
FREQUENTLY ASKED QUESTIONS
Is BIDNW30N60H3 RoHS compliant?
Yes, BIDNW30N60H3 is RoHS compliant.
What is the lead time for BIDNW30N60H3?
The standard lead time for BIDNW30N60H3 is approximately 16 days. In-stock quantities ship from Master Electronics.
IN STOCK: 1,338
Can Ship immediately
MOQ for In Stock Qty: 62
MOQ for out of Stock Qty: 62
Factory Lead-Time 16 Weeks
Datasheet
Bourns Profile
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