NTJD5121NT1G by onsemi
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NTJD5121NT1G

A dual N-Channel power MOSFET with ESD protection, rated for 60 V and 295 mA in a SC-88 package. ...

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RoHS Compliant
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DESCRIPTION

The NTJD5121NT1G is a dual N-Channel power MOSFET featuring integrated ESD protection in a compact SC-88 surface-mount package. This device is characterized by a drain-to-source voltage of 60 V and a continuous drain current of 295 mA at an ambient temperature of 25°C. It offers low on-resistance, with a maximum RDS(on) of 1.6 Ω at a 10 V gate-source voltage and 2.5 Ω at 4.5 V. Key features include a low gate threshold voltage, low input capacitance, and a gate-source ESD rating of 2000 V (HBM). These characteristics make the NTJD5121NT1G suitable for applications such as low-side load switches and DC-DC converters.

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SPECIFICATIONS

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Products found: 0
Supplier:
onsemi
Part No:
NTJD5121NT1G
Unit of Measure:
Per Each
RoHS:
Yes
HTS:
8541290095
COO:
TW
ECCN:
EAR99
Supplier's Standard Package: The item count, length, weight, or volume contained in the supplier’s original packaging for efficient storage, handling, and distribution.
3000

FREQUENTLY ASKED QUESTIONS

Is NTJD5121NT1G RoHS compliant?

Yes, NTJD5121NT1G is RoHS compliant.

What is the lead time for NTJD5121NT1G?

The standard lead time for NTJD5121NT1G is approximately 72 weeks. In-stock quantities ship from Master Electronics.

IN STOCK: 150,000

Ships today, if you order in

On Order: 60,000   can ship 3/1/28 

Minimum Order Quantity: 3000

Multiple: 3000

Factory Lead-Time 72 Weeks

Price (USD)

Qty
Unit Price
3,000
$0.0637
6,000
$0.0562
12,000
$0.0556
27,000
$0.0555
51,000
$0.0553
102,000
$0.0552
150,000
$0.0550
252,000 +
$0.0549
Supplier's Standard Package
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