APT45GP120JDQ2
The APT45GP120JDQ2 is a 1200V Punch-Through technology IGBT designed for high-frequency, high-voltage switching applications. ...
DESCRIPTION
The APT45GP120JDQ2 is a POWER MOS 7® IGBT that utilizes Punch-Through technology for high-voltage power switching. It is rated for a collector-emitter voltage of 1200V and can handle a continuous collector current of 75A at a case temperature of 25°C, or 34A at 110°C. The device features a total power dissipation of 329W and a robust Reverse Bias Safe Operating Area (RBSOA) of 170A at 960V. With an operating junction temperature range of -55°C to 150°C and features like low conduction loss and ultrafast tail current shutoff, it ensures reliable performance. This IGBT is optimized for use in high-frequency switch-mode power supplies and other demanding switching applications.
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SPECIFICATIONS
FREQUENTLY ASKED QUESTIONS
Is APT45GP120JDQ2 RoHS compliant?
Yes, APT45GP120JDQ2 is RoHS compliant.
What is the lead time for APT45GP120JDQ2?
The standard lead time for APT45GP120JDQ2 is approximately 20 days. In-stock quantities ship from Master Electronics.
IN STOCK: 21
Can Ship immediately
Manufacturer Stock: 28 can ship 9/21/26
MOQ for out of Stock Qty: 5
Factory Lead-Time 20 Weeks can ship 1/25/27
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