NDT452AP
The NDT452AP is a P-Channel enhancement mode power field-effect transistor rated for -30V drain-source voltage and -5A continuous drain current. ...
DESCRIPTION
The NDT452AP is a P-Channel enhancement mode power field-effect transistor produced using a high cell density DMOS technology to minimize on-state resistance and provide superior switching performance. It features a drain-source voltage (VDSS) of -30V, a continuous drain current (ID) of -5A, and a low on-state resistance (RDS(ON)) of 0.065 Ω at a gate-source voltage of -10V. The device can handle pulsed drain currents up to -15A and operates over a wide temperature range of -65°C to 150°C. Housed in a SOT-223 surface-mount package, this transistor is particularly suited for low-voltage applications such as notebook computer power management and DC motor control.
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SPECIFICATIONS
FREQUENTLY ASKED QUESTIONS
Is NDT452AP RoHS compliant?
No, NDT452AP is not RoHS compliant.
What is the lead time for NDT452AP?
The standard lead time for NDT452AP is approximately 11 days. In-stock quantities ship from Master Electronics.
IN STOCK: 1,649
Can Ship immediately
On Order:
8,000
can ship 11/2/26
Minimum Order Quantity: 50
Factory Lead-Time 11 Weeks
Price (USD)
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