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BIDW20N60T
IGBT Discrete 600V - 20A - TO-247 - -55°C to +150°C ...
DESCRIPTION
BIDW20N60T is an N-channel Insulated Gate Bipolar Transistor (IGBT) that combines MOS gate and bipolar transistor technology for high voltage and high current applications. It features advanced trench-gate field-stop technology providing a collector-emitter voltage of 600 V, continuous collector current of 20 A, and low collector-emitter saturation voltage (VCE(sat)) of 1.7 V typical at 25°C. The device offers total power dissipation of 192 W, low switching losses with turn-on energy of 1 mJ and turn-off energy of 0.3 mJ, and operates over a junction temperature range of -55°C to +150°C. Common applications include switch-mode power supplies (SMPS), uninterruptible power sources (UPS), power factor correction (PFC), and stepper motor drives where optimized conduction and low switching losses are essential.
Search Keywords: BIDW20N60T
SPECIFICATIONS
FREQUENTLY ASKED QUESTIONS
Is BIDW20N60T RoHS compliant?
Yes, BIDW20N60T is RoHS compliant.
What is the lead time for BIDW20N60T?
The standard lead time for BIDW20N60T is approximately 16 weeks. In-stock quantities ship from Master Electronics.
IN STOCK: 4,195
Can Ship immediately
MOQ for In Stock Qty: 69
MOQ for out of Stock Qty: 69
Factory Lead-Time 16 Weeks
Datasheet
Bourns Profile
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