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NDT452AP by onsemi
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NDT452AP

The NDT452AP is a P-Channel enhancement mode power field-effect transistor rated for -30V drain-source voltage and -5A continuous drain current. ...

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RoHS Non-Compliant
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DESCRIPTION

The NDT452AP is a P-Channel enhancement mode power field-effect transistor produced using a high cell density DMOS technology to minimize on-state resistance and provide superior switching performance. It features a drain-source voltage (VDSS) of -30V, a continuous drain current (ID) of -5A, and a low on-state resistance (RDS(ON)) of 0.065 Ω at a gate-source voltage of -10V. The device can handle pulsed drain currents up to -15A and operates over a wide temperature range of -65°C to 150°C. Housed in a SOT-223 surface-mount package, this transistor is particularly suited for low-voltage applications such as notebook computer power management and DC motor control.

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SPECIFICATIONS

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Products found: 0
Supplier:
onsemi
Part No:
NDT452AP
Unit of Measure:
Per Each
RoHS:
No
HTS:
8541210095
COO:
KR
ECCN:
EAR99
Supplier Standard Pack: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
4000

FREQUENTLY ASKED QUESTIONS

Is NDT452AP RoHS compliant?

No, NDT452AP is not RoHS compliant.

What is the lead time for NDT452AP?

The standard lead time for NDT452AP is approximately 11 days. In-stock quantities ship from Master Electronics.

IN STOCK: 1,649

Can Ship immediately

On Order: 8,000   can ship 11/2/26 

Minimum Order Quantity: 50

Factory Lead-Time 11 Weeks

Price (USD)

Qty
Unit Price
50
$0.6768
500
$0.3836
1,000
$0.3761
4,000
$0.3687
8,000
$0.3435
12,000
$0.3426
16,000
$0.3418
28,000 +
$0.3409

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