NDP6060L

The NDP6060L is an N-Channel logic level enhancement mode power field effect transistor designed for low voltage applications. ...

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DESCRIPTION

The NDP6060L is a logic level N-Channel enhancement mode power field effect transistor produced using a proprietary, high cell density DMOS technology. It is rated for a drain-source voltage of 60V and a continuous drain current of 48A. Key features include an extremely low on-state resistance of 0.025 Î© at VGS = 5V, a low gate threshold voltage under 2.0V for direct operation from logic drivers, and a high maximum junction temperature rating of 175Â°C. This device is specifically tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses. It is particularly suited for automotive applications, DC/DC converters, PWM motor controls, and other battery-powered circuits where fast switching and low power loss are critical.

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Supplier:

onsemi

Part No:

NDP6060L

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Per Each

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HTS:

8541290095

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ECCN:

EAR99

Supplier Standard Pack: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.