Login
EN
English
中文 / 汉语
Deutsch
Español
Nederlands
FDT86113LZ
The FDT86113LZ is an N-Channel PowerTrench® MOSFET rated for 100V drain-to-source voltage and 3.3A continuous drain current. ...
DESCRIPTION
The FDT86113LZ is an N-Channel logic-level MOSFET produced using an advanced PowerTrench® process to minimize on-state resistance while maintaining superior switching performance. This device features a maximum on-resistance (rDS(on)) of 100 mΩ at a VGS of 10V and is rated for a drain-to-source voltage of 100V with a continuous drain current of 3.3A. It incorporates a Gate-to-Source zener diode for enhanced ESD protection and is 100% UIL tested. Housed in a surface-mount SOT-223 package, this MOSFET is optimized for high power and current handling, making it ideal for DC-DC switching applications.
Search Keywords: FDT86113LZ
SPECIFICATIONS
FREQUENTLY ASKED QUESTIONS
Is FDT86113LZ RoHS compliant?
No, FDT86113LZ is not RoHS compliant.
What is the lead time for FDT86113LZ?
The standard lead time for FDT86113LZ is approximately 19 weeks. In-stock quantities ship from Master Electronics.
IN STOCK: 25,945
Can Ship immediately
Minimum Order Quantity: 50
Factory Lead-Time 19 Weeks
Price (USD)
Datasheet
Product Change Notification
