FDS6675BZ
The FDS6675BZ is a P-Channel PowerTrench® MOSFET with a drain-to-source voltage of -30V and a continuous drain current of -11A. ...
DESCRIPTION
The FDS6675BZ is a P-Channel MOSFET manufactured using an advanced PowerTrench® process to minimize on-state resistance. This device features a maximum on-state resistance (rDS(on)) of 13 mΩ at a gate-source voltage of -10V and a continuous drain current of -11A. It supports a drain-to-source voltage of -30V, an extended gate-to-source voltage range of ±25V, and a pulsed drain current up to -55A. Due to its high power and current handling capabilities, the FDS6675BZ is well-suited for power management and load switching applications, particularly in notebook computers and portable battery packs.
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SPECIFICATIONS
FREQUENTLY ASKED QUESTIONS
Is FDS6675BZ RoHS compliant?
Yes, FDS6675BZ is RoHS compliant.
What is the lead time for FDS6675BZ?
The standard lead time for FDS6675BZ is approximately 17 days. In-stock quantities ship from Master Electronics.
IN STOCK: 6,900
Can Ship immediately
Minimum Order Quantity: 100
Factory Lead-Time 17 Weeks
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