VN2222LL-G
Microchip TechnologyMOSFET Transistor - N Channel - 230 mA - 60 V - 7.5 ohm - 10 V - 2.5 V. ...
DESCRIPTION
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
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SPECIFICATIONS
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Factory Lead-Time 4 Weeks
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