BIDW30N60T
IGBT Discrete 600V - 30A - TO-247 - -55°C to +150°C ...
DESCRIPTION
BIDW30N60T is an N-channel Insulated Gate Bipolar Transistor (IGBT) that combines MOS gate and bipolar transistor technology for high voltage and high current applications. It features advanced trench-gate field-stop technology providing low collector-emitter saturation voltage (VCE(sat) typ. 1.65 V at 30 A) and reduced switching losses. The device offers a collector-emitter voltage rating of 600 V, continuous collector current of 30 A at 100°C, and total power dissipation of 230 W. With fast switching characteristics including turn-on delay time of 30 ns and turn-off delay time of 67 ns, it is well-suited for switch-mode power supplies (SMPS), uninterruptible power sources (UPS), power factor correction (PFC), and induction heating applications.
Search Keywords: BIDW30N60T
SPECIFICATIONS
FREQUENTLY ASKED QUESTIONS
Is BIDW30N60T RoHS compliant?
Yes, BIDW30N60T is RoHS compliant.
What is the lead time for BIDW30N60T?
The standard lead time for BIDW30N60T is approximately 16 days. In-stock quantities ship from Master Electronics.
IN STOCK: 2,199
Can Ship immediately
Minimum Order Quantity: 56
Factory Lead-Time 16 Weeks
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