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BIDW20N60T by bourns
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BIDW20N60T

Bourns

IGBT Discrete 600V - 20A - TO-247 - -55°C to +150°C ...

RoHS Compliant
TUBE Packaging
Accessories
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DESCRIPTION

BIDW20N60T is an N-channel Insulated Gate Bipolar Transistor (IGBT) that combines MOS gate and bipolar transistor technology for high voltage and high current applications. It features advanced trench-gate field-stop technology providing a collector-emitter voltage of 600 V, continuous collector current of 20 A, and low collector-emitter saturation voltage (VCE(sat)) of 1.7 V typical at 25°C. The device offers total power dissipation of 192 W, low switching losses with turn-on energy of 1 mJ and turn-off energy of 0.3 mJ, and operates over a junction temperature range of -55°C to +150°C. Common applications include switch-mode power supplies (SMPS), uninterruptible power sources (UPS), power factor correction (PFC), and stepper motor drives where optimized conduction and low switching losses are essential.

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SPECIFICATIONS

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Products found: 0
Supplier:
Bourns
Part No:
BIDW20N60T
Unit of Measure:
Per Each
RoHS:
Yes
HTS:
8541290095
COO:
CN
ECCN:
EAR99
Supplier Standard Pack: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
600
Package Type:
TUBE

IN STOCK: 4,195

Can Ship immediately

MOQ for In Stock Qty: 69

MOQ for out of Stock Qty: 69

Factory Lead-Time 16 Weeks

Price (USD)

Qty
Unit Price
69
$4.37
250
$4.36
500
$4.35
750
$4.34
1,500
$2.30
2,250
$1.61
3,000 +
$1.58