OPS667
The OPS667 is a matched pair consisting of a gallium arsenide infrared emitting diode and an NPN silicon phototransistor in a T-1 package. ...
DESCRIPTION
The OPS667 is a sensor pair comprising a gallium arsenide infrared emitting diode and a corresponding NPN silicon phototransistor. This device features a minimum on-state collector current of 5.0 mA with a 20 mA forward current. Key electrical characteristics include a collector-emitter breakdown voltage of at least 30 V, a maximum collector-emitter dark current of 100 nA, and a collector-emitter saturation voltage of 0.4 V. Designed for reliability, it operates over a temperature range of -40°C to +100°C. The OPS667 is well-suited for applications such as non-contact reflective object sensing, assembly line automation, machine safety, and end-of-travel sensors.
Search Keywords: OPS667
SPECIFICATIONS
FREQUENTLY ASKED QUESTIONS
Is OPS667 RoHS compliant?
Yes, OPS667 is RoHS compliant.
What is the lead time for OPS667?
The standard lead time for OPS667 is approximately 22 days. In-stock quantities ship from Master Electronics.
IN STOCK: 0
MOQ for out of Stock Qty: 1000
Multiple: 1000
Factory Lead-Time 22 Weeks
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