NDS331N
The NDS331N is an N-Channel logic level enhancement mode Field Effect Transistor (FET) featuring a 20V drain-source voltage and 1.3A continuous drain current. ...
DESCRIPTION
The NDS331N is an N-Channel logic level enhancement mode power FET designed with high-density DMOS technology to minimize on-state resistance. It operates with a drain-source voltage of 20V, a continuous gate-source voltage of 8V, and handles a continuous drain current of 1.3A. Key features include a low on-state resistance (RDS(ON)) of 0.16 Ω at VGS=4.5V and 0.21 Ω at VGS=2.7V. Housed in a SOT-23 surface-mount package, this transistor is ideal for low-voltage applications such as notebook computers, portable phones, and other battery-powered circuits requiring fast switching and low power loss.
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SPECIFICATIONS
FREQUENTLY ASKED QUESTIONS
Is NDS331N RoHS compliant?
Yes, NDS331N is RoHS compliant.
What is the lead time for NDS331N?
The standard lead time for NDS331N is approximately 16 weeks. In-stock quantities ship from Master Electronics.
IN STOCK: 75,422
Can Ship immediately
Minimum Order Quantity: 250
Factory Lead-Time 16 Weeks
Price (USD)
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