NDS0605
The NDS0605 is a P-Channel enhancement mode field effect transistor designed for use as a voltage-controlled small signal switch. ...
DESCRIPTION
The NDS0605 is a P-Channel enhancement mode field effect transistor produced using a high cell density DMOS technology for fast switching and low on-state resistance. It features a drain-source voltage of -60V, a continuous drain current of -0.18A, and a typical on-state resistance (RDS(ON)) of 5 Ω at a gate-source voltage of -10V. The transistor operates over a wide temperature range from -55°C to +150°C and is housed in a compact SOT-23 package. This device is particularly suited for low voltage applications that require a low current, high-side switch, capable of delivering pulsed currents up to -1A.
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SPECIFICATIONS
FREQUENTLY ASKED QUESTIONS
Is NDS0605 RoHS compliant?
Yes, NDS0605 is RoHS compliant.
What is the lead time for NDS0605?
The standard lead time for NDS0605 is approximately 45 weeks. In-stock quantities ship from Master Electronics.
IN STOCK: 69,000
Can Ship immediately
Minimum Order Quantity: 3000
Multiple: 3000
Factory Lead-Time 45 Weeks
Price (USD)
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