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H11G2SR2M
The H11G2SR2M is a high-voltage, photodarlington-type optically coupled optocoupler designed for electrical isolation and high sensitivity. ...
DESCRIPTION
The H11G2SR2M is a photodarlington-type optocoupler, which integrates a gallium arsenide infrared emitting diode with a silicon darlington phototransistor. It features a high collector-emitter breakdown voltage of at least 80V and offers high sensitivity with a minimum current transfer ratio (CTR) of 500% at a low input current of 1mA. This device maintains low leakage current, not exceeding 100µA at 60V and an elevated temperature of 80°C, and has a maximum saturation voltage of 1.0V. It is well-suited for applications such as CMOS logic interfacing, telephone ring detection, low input TTL interfacing, and power supply isolation.
Search Keywords: H11G2SR2M
SPECIFICATIONS
FREQUENTLY ASKED QUESTIONS
Is H11G2SR2M RoHS compliant?
Yes, H11G2SR2M is RoHS compliant.
What is the lead time for H11G2SR2M?
The standard lead time for H11G2SR2M is approximately 24 weeks. In-stock quantities ship from Master Electronics.
IN STOCK: 1,850
Can Ship immediately
On Order:
7,000
can ship 1/8/27
Minimum Order Quantity: 50
Factory Lead-Time 24 Weeks
Datasheet
Product Change Notification