FQB12P20TM
The FQB12P20TM is a -200V P-Channel enhancement mode MOSFET designed for high-efficiency switching applications. ...
DESCRIPTION
The FQB12P20TM is a P-Channel enhancement mode power MOSFET produced using a proprietary planar stripe, DMOS technology. It is characterized by a drain-source voltage of -200V, a continuous drain current of -11.5A, and a low on-state resistance of 0.47Ω at a -10V gate-source voltage. This device offers superior switching performance with a low typical gate charge of 31 nC and a low reverse transfer capacitance of 30 pF. It is 100% avalanche tested and features improved dv/dt capability for robust operation. These characteristics make the FQB12P20TM well-suited for high-efficiency switching DC/DC converters.
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SPECIFICATIONS
FREQUENTLY ASKED QUESTIONS
Is FQB12P20TM RoHS compliant?
No, FQB12P20TM is not RoHS compliant.
What is the lead time for FQB12P20TM?
The standard lead time for FQB12P20TM is approximately 11 days. In-stock quantities ship from Master Electronics.
IN STOCK: 1,890
Can Ship immediately
Minimum Order Quantity: 25
Factory Lead-Time 11 Weeks
Price (USD)
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