BSDW20G120C2
Silicon Carbide Shottky Barrier Diode - 20A - Vr: 1200V - Vf: 1.42V - -55°C to 175°C - TO247-3 ...
DESCRIPTION
BSDW20G120C2 is a Silicon Carbide (SiC) Schottky Diode designed for high-efficiency power rectification applications. It features a repetitive peak reverse voltage of 1200 V, average forward current of 20 A, and non-repetitive peak forward surge current of 80 A. The device offers low forward voltage drop (1.6 V typical at 10 A), low reverse leakage current (1 µA typical at 25 °C), and operates over a junction temperature range of -55 °C to +175 °C. With total power dissipation of 272.7 W and thermal resistance of 0.55 °C/W (junction to mounting base, per device), this diode is well-suited for Switched-Mode Power Supplies (SMPS), Power Factor Correction (PFC), PV inverters, DC-DC converters, and motor drives.
Search Keywords: BSDW20G120C2
SPECIFICATIONS
FREQUENTLY ASKED QUESTIONS
Is BSDW20G120C2 RoHS compliant?
Yes, BSDW20G120C2 is RoHS compliant.
What is the lead time for BSDW20G120C2?
The standard lead time for BSDW20G120C2 is approximately 18 days. In-stock quantities ship from Master Electronics.
IN STOCK: 3,600
Can Ship immediately
MOQ for In Stock Qty: 23
MOQ for out of Stock Qty: 23
Factory Lead-Time 18 Weeks
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